Physical and Technological Fundamentals of Sapphire Substrates Production for Devices of Solid-state Electronics

Abstract

The results of numerical simulation allow to investigate the thermal conditions received by active heaters influence on the thermoelastic stresses and gas inclusions in sapphire. We carried out the experiments for defects detection in sapphire crystals. We suggest the recommendations about sapphire crystals growth and processing improvement for profitability increase in sapphire substrates production for microelectronics.

References
[1] Teplova T B, Samerhanova A S 2006 Mining Informational and Analytical Bulletin339


[2] Bogdanov Y, Kochemasov V, Hasyanova E 2014 Pecatniy Montazh204


[3] Akselrod M S, Bruni F J 2012 J. Cryst. Growth134


[4] Dobrovinskaya E R, Lytvynov L A, Pishchik V V 2002 Sapphire and Other Corundum Crystals (Kharkiv: Institute of Single Crystals)


[5] Dobroviskaya E R, Lytvynov L A, Pishchik V V 2009 Sapphire. Material, Manufacturing, Applications(New York: Springer)


[6] Malyukov S P, Klunnikova Y V, Kirillova E V 2016 IOP Conference Series: Materials Science and Engineering151(1),012022


[7] Madency E, Oterkus E 2014 Predynamic Theory and Its Application(New York: Springer)


[8] Abgaryan A A 2001 Matematicheskoe Modelirovanie20


[9] Malyukov S P, Klunnikova Y V 2014 Advanced Materials Complex Investigations of Saphhire crystals Production (Springer Proceedings in Physics vol 152) (Switzerland) chapter pp 55–69


[10] Lykov A V 1967 Theory of Thermal Conductivity(Moscow: High School)


[11] Malyukov S P, Klunnikova Y V, Cherednichenko D I 2013 Sapphire: Structure, Technology and Applications Heat-Physical Processes at the Sapphire Crystals Growth by Horizontal Directed Crystallization(USA: Nova Science Publishers) chapter pp 101– 118


[12] Malyukov S P, Klunnikova Y V, Parinov I A 2014 Advanced Nano- and Piezoelectric Materials and Their Applications Investigation of Defects Formation During Sapphire Growth(USA: Nova Science Publishers) chapter pp 89–108