The Technique for I–V Characteristic Measurements of MOSFETs from Output Stage of MOS ICs
DOI:
https://doi.org/10.18502/keg.v3i6.2973Abstract
Experimental technique for measurements of I–V characteristics of MOSFETs from output stage of MOS ICs is developed and demonstrated using Schmitt trigger array 1594TL2T.
References
Bakerenkov, A. S. (2016). Experimental equipment for extraction of ELDRS conversion model parameters and its application for estimation of radiation effects in bipolar devices. IFMBE Proceedings, vol. 55, pp. 520–523.
Pease, R. P., Schrimpf, R. D., Fletwood, D. M. (2009). ELDRS in bipolar linear circuits: A review. IEEEE Transactions on Nuclear Science, vol. 56, no. 4, pp. 1894–1908. DOI: 10.1109/TNNS.2008.2011485
Pershenkov, V. S., Savchenkov, D. V., Bakerenkov, A. S., et al. (2009). The conversion model of low dose rate effect in bipolar transistors. RADECS 2009, Conference Proceedings. DOI: 10.1109/RADECS.2009.5994661
Bakerenkov, A. S., Belyakov, V. V., Kozyukov, A. E., et al. (February 11, 2015). Temperature control system for the study of single event effects in integrate d circuits using a cyclotron accelerator. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers„ Detectors and Associated Equipment, vol. 7773, pp. 33–38. DOI: 10.10116/j.nima.2014.11.034
Anashin, V. S., Kozyukov, A. E., Emeliyanov, V. V., et al. (2012). Equipment and test results of the electronic components to SEE in the temperature range. IEEE Radiation Effects Data Workshop, pp. 1–5.
