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Bakerenkov, A. S., Glukhov, N. S., Shaltaeva, Y. R., Rodin, A. S., & Felitsyn, V. A. (2018). The Technique for I–V Characteristic Measurements of MOSFETs from Output Stage of MOS ICs. KnE Engineering, 3(6), 74–78. https://doi.org/10.18502/keg.v3i6.2973

https://doi.org/10.18502/keg.v3i6.2973

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authors

  • A S Bakerenkov
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  • N S Glukhov
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  • Yu R Shaltaeva
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  • A S Rodin
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  • V A Felitsyn
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Published Date

  • Oct 8, 2018

The Technique for I–V Characteristic Measurements of MOSFETs from Output Stage of MOS ICs

KnE Engineering / Breakthrough directions of scientific research at MEPhI: Development prospects within the Strategic Academic Units / Pages 74–78

Abstract

Experimental technique for measurements of I–V characteristics of MOSFETs from output stage of MOS ICs is developed and demonstrated using Schmitt trigger array 1594TL2T.

References
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[2] Pease, R. P., Schrimpf, R. D., Fletwood, D. M. (2009). ELDRS in bipolar linear circuits: A review. IEEEE Transactions on Nuclear Science, vol. 56, no. 4, pp. 1894–1908. DOI: 10.1109/TNNS.2008.2011485


[3] Pershenkov, V. S., Savchenkov, D. V., Bakerenkov, A. S., et al. (2009). The conversion model of low dose rate effect in bipolar transistors. RADECS 2009, Conference Proceedings. DOI: 10.1109/RADECS.2009.5994661


[4] Bakerenkov, A. S., Belyakov, V. V., Kozyukov, A. E., et al. (February 11, 2015). Temperature control system for the study of single event effects in integrate d circuits using a cyclotron accelerator. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers„ Detectors and Associated Equipment, vol. 7773, pp. 33–38. DOI: 10.10116/j.nima.2014.11.034


[5] Anashin, V. S., Kozyukov, A. E., Emeliyanov, V. V., et al. (2012). Equipment and test results of the electronic components to SEE in the temperature range. IEEE Radiation Effects Data Workshop, pp. 1–5.