KnE Materials Science | IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology (ASRTU) | pages: 57-63

DOI: 10.18502/kms.v1i1.563

Dielectric Permittivity Enhancement By Charged Domain Walls Formation In Stoichiometric Lithium Niobate

A.A. Esin

A.R. Akhmatkhanov

V.Ya. Shur


We present an experimental study of contribution of charged domain walls into dielectric permittivity of lithium niobate. It has been shown that formation of dense structure with spike-like domains leads to order of magnitude increase of permittivity, which gradually decreases with time. The decrease rate accelerates under DC bias. Dielectric permittivity decreases linearly with a logarithm of frequency. The obtained results were explained considering vibration of the steps on the charged domain walls.


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ISSN: 2519-1438