Optical Properties of Cu2S/SnS2 Precursor Layers for the Preparation of Kesterite Cu2SnS3 Photovoltaic Absorber

Abstract

The Cu2S and SnS2 layers have been prepared by the chemical bath deposition method. The results of SEM and EDX analyses confirm a high stoichiometry of the synthesized semiconductor thin films. The optical properties of the Cu2S and SnS2 layers have been studied, and the optical band gap values have been determined.

References
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