Precursor Compounds for Cu2ZnSe2 Structure


Chemical deposition from aqueous environments has significant perspective among existing methods of obtaining Cu2Se and ZnSe thin films. This method eliminates using complex expensive equipment, high-temperature heating, and deep vacuum. In this work, the calculation method for predicting the border conditions for the formation of individual metal chalcogenides phases was presented and widely tested on practice. Energy-dispersive analysis was used to investigate the elemental composition of the films. According to the results of thermoelectric power method, the layers had hole type conductivity.

Keywords: thin films, chemical bath deposition, ion equilibrium, border conditions for deposition, copper (I) selenide, zinc selenide

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