Selection of Conductive Film Thickness for Submicron Metallization
Abstract
The integration scale increase is accompanied by the proportional decrease of all sizes of elements of an integrated circuit (scaling law). As a result, the width and thickness of metallization conductors decrease. Depending on the topological norm, the thickness of metallization becomes less than 100 nm. The results of research on the effect of conductive film thickness on the basis of Al-Ti-Mo on resistance of layers are presented. Films with the thickness of d = 3–100 nm are obtained by electron evaporation. The critical thickness of metallization is defined, after the exceeding of which a sharp increase of layer resistance is observed. The effect of material metallization on the critical value of the thickness is determined. The carried out calculations and research of the reflexion factor of metal layers well coincide with the results of the experiments.
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