Study of Microrelief Influence on Optical Output Coefficient of GaN-based LED

Abstract

This work is devoted to the investigation of the influence on the light output coefficient of antireflective coatings by different configurations of the micro-relief formed on the light output surface of a GaN-based LED. The technology of the micro-relief fabrication in SiO2 -based antireflective coatings was developed with the use of electron-beam lithography (EBL) and contact photolithography. Simulation of the influence of the micro-relief of various proportions and configurations on the optical output coefficient was implemented. It was discovered that the micro-relief made with electron-beam lithography and contact photolithography increased the optical output coefficient.

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