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Golovin, V., Romanovich, D., Soboleva, O., Podoskin, A., Gavrina, P., Kapitonov, V., Veselov, D., Slipchenko, S., & Pikhtin, N. (2018). Sub-nanosecond Pulse Generation from a Two-section Laser-thyristor: Theoretical Analysis. KnE Engineering, 3(6), 126–135. https://doi.org/10.18502/keg.v3i6.2984

https://doi.org/10.18502/keg.v3i6.2984

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authors

  • V Golovin
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  • D Romanovich
    No author data available.
  • O Soboleva
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  • A Podoskin
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  • P Gavrina
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  • V Kapitonov
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  • D Veselov
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  • S Slipchenko
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  • N Pikhtin
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Published Date

  • Oct 8, 2018

Sub-nanosecond Pulse Generation from a Two-section Laser-thyristor: Theoretical Analysis

KnE Engineering / Breakthrough directions of scientific research at MEPhI: Development prospects within the Strategic Academic Units / Pages 126–135

Abstract

We have developed a theoretical model of a two-section laser-thyristor. It is shown that using a 4 µm weakly doped p-base can increase blocking voltage up to 50 V, which makes it possible to generate 2 ns 10 A current pulses. It is demonstrated that the proposed device utilizes passive Q switching to generate high-power short optical pulses that account for up to 80% of output power. By picking the optimal passive section length, we have achieved optical pulses of ∼30 ps full width at half maximum (FWHM) and ∼100 W peak power.


 


 


Keywords: pulsed laser, semiconductor N-p-N-i-P heterostructure, laser-thyristor, dynamic model of pulsed laser

References
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[2] Hallman, L. W., Haring, K., Toikkanen, L., et al. (2012). 3 nJ, 100 ps laser pulses generated with an asymmetric waveguide laser diode for a single-photon avalanche diode time-of-flight (SPAD TOF) rangefinder application. Measurement Science and Technology, vol. 23, pp. 025202-1–025202-8.


[3] Lanz, B., Vainshtein, S. N., and Kostamovaara, J. T. (2006). High power gain-switched laser diode using a superfast GaAs avalanche transistor for pumping. Applied Physics Letters, vol. 89, pp. 081122-1–081122-3.


[4] Podoskin, A. A., Soboleva, O. S., Zakharov, M. S., et al. (2015). Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures. Semiconductor Science and Technology, vol. 30, pp. 125011-1–125011-6.


[5] Slipchenko, S. O., Podoskin, A. A., Rozhkov, A. V., et al. (2013). High-power pulse semiconductor laser-thyristor emitting at 900-nm wavelength. IEEE Photonics Technology Letters, vol. 25, pp.1664–1667.


[6] Podoskin, A. A., Soboleva, O. S., Zolotarev, V. V., et al. (2016). Laser-thyristors as a source of high-power laser pulses with a pulse width of 1-100 ns. IEEE Laser Optics (LO) 2016 International Conference, 7549719.


[7] Ripper, J. E. and Dyment, J. C. (1968). Internal Q switching in GaAs junction lasers. Applied Physics Letters, vol. 12, pp. 365–367.


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[9] Slipchenko, S. O., Yuferev, V. S., Podoskin, A. A., et al. (2015). Specific features of the injection processes dynamics in high-power laser thyristor. IEEE Transactions on Electron Devices, vol. 62, pp. 4091–4096.


[10] Slipchenko, S. O., Podoskin, A. A., Soboleva, O. S., et al. (March 4, 2016). Dynamic model of pulsed laser generators based on multi-junction N-p-N- i-P heterostructures. SPIE 9742, Physics and Simulation of Optoelectronic Devices XXIV, 97420I.