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Bakerenkov, A. S., Shaltaeva, Y. R., Rodin, A. S., Glukhov, N. S., Felitsyn, V. A., & Zhukov, A. I. (2018). The Application of Schematic Compensation Technique for Increasing of Radioelectronic Devices Reliability. KnE Engineering, 3(6), 97–99. https://doi.org/10.18502/keg.v3i6.2978

https://doi.org/10.18502/keg.v3i6.2978

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authors

  • A S Bakerenkov
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  • Y R Shaltaeva
    No author data available.
  • A S Rodin
    No author data available.
  • N S Glukhov
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  • V A Felitsyn
    No author data available.
  • A I Zhukov
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Published Date

  • Oct 8, 2018

The Application of Schematic Compensation Technique for Increasing of Radioelectronic Devices Reliability

KnE Engineering / Breakthrough directions of scientific research at MEPhI: Development prospects within the Strategic Academic Units / Pages 97–99

Abstract

The schematic method development of radiation degradation compensation of operating amplifiers’ input currents and offset voltages on basis of radiation-sensitive parameter degradation research of integral microcircuits and discrete transistors is presented and experimentally verified.

References
[1] Pershenkov, V. S., Popov, V. D., and Shalnov, A. V. Surface Radiation Effects in the Elements of Integral Microcircuits. M: Energy Atom Publishing house.


[2] Bakerenkov, A. S., Belyakov, V. V., Kozyukov, A. E., et al. (February 11, 2015). Temperature control system for the study of single event effects in integrated circuits using a cyclotron accelerator. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 773, pp. 33–38.


[3] Anashin, V. S., Kozyukov, A. E., Emeliyanov, V. V., et al. (2012). Equipment and test results of the electronic components to SEE in the temperature range. IEEE Radiation Effects Data Workshop, 6353725.