TY - JOUR AU - S A Nomoev AU - I S Vasilevskii AU - A N Vinichenko AU - K I Kozlovskiy PY - 2018/04/17 Y2 - 2024/03/29 TI - Generation of Terahertz Pulsed Radiation with Photoconductive Antennas Based of Low-Temperature-Grown Gallium Arsenide and Its Applications JF - KnE Energy JA - KEn VL - 3 IS - 2 SE - Articles DO - 10.18502/ken.v3i2.1836 UR - https://knepublishing.com/index.php/KnE-Energy/article/view/1836 AB - The design and technological conditions for manufacturing photoconductive antennas based on low-temperature-grown gallium arsenide (LT-GaAs) have been developed. An optimized photoconductive THz antenna based on LT-GaAs with flag geometry of the contacts was fabricated. LT-GaAs samples were obtained by molecular-beamepitaxy at temperatures of 230 ∘C on GaAs (100) substrates. On an optical setup with a femtosecond titanium-sapphire laser, a volt (watt)-ampere characteristics and photocurrent efficiency of the photo-conductive antenna measured by the pyroelectric sensor. The optimum annealing temperature of LT-GaAs was determined for generation of intense THz radiation. PCA have been tested in the terahertz radiation generation. The substantial effect of water vapor in the air and the environment of transparent objects is THz. The useful terahertz bandwidth extends from 0.1 to 2.7 THz and the source of terahertz wave is the most commonly used nonlinear crystal ZnTe in the biomedicine applications. However, in comparison PCA on LT-GaAs with ZnTe have better results in the intensity and the power of the THz response. Therefore, it will be possible to detect a lower concentration of biological objects.Keywords: Photoconductive antennas; low-temperature grown gallium arsenide. ER -