Conditions for the Dye Sensitization of Photoprocesses in Semiconductors

Abstract

The necessary requirements for the photoeffect sensitization are the existence of electron states in the semiconductors capable of accepting energy from the dye and subsurface band bending. Methods for control of the sensitization efficiency are discussed.


Keywords: Internal Photo Effect, Semiconductors, Dye Sensitization.

References
[1] James T.H., The Theory of the Photographic Process. Мacmillan Publ. Company. New York. 1977.


[2] Akimov I.A., Cherkasov Yu.A., Cherkashin M.I., Sensitized Photoeffect. Nauka. Moscow. 1980.


[3] Akimov I.A., Goryaev М.A., Photoprocesses in semiconductors with adsorbed dye. Zh. fizicheskoi khimii, 1984. V. 58, No 5. P.1104-1107.


[4] Goryaev, М., Physical fundamentals of solid state photochemistry. Photolysis of inorganic solids. Lambert Acad. Publ., Saarbrucken. 2013.


[5] Gratzel, M., Dye-sensitized Solar Cells. J. Photochem. Photobiol. C: Photochem. Rev. 2003. V. 4. No 2. P. 145-153.


[6] Alferov Zh.I., Andreev V.M., Rumyantsev V.D., Solar Photovoltaics: Trends and Prospects. Semiconductors. 2004. V. 38. No 8. P. 899-908.


[7] Afanasyev, V.P., Terukov, E.I., Sherchenkov, A.A., Thin Film Solar Cells Based on Silicon. State Electrotech. Univ. St. Petersburg. 2011.


[8] Duffie J.A., Beckman W.A., Solar Engineering of Thermal Processes, John Wiley & Sons, Inc. New York. 2013.


[9] Goryaev М.A., Dudnikov Yu.A., Electronic and hybrid imaging systems. Zh. nauchnoi i prikladnoi fotografii i kinematografii. 1990. V. 35. No 5. P. 386-394.


[10] Boyle W.S., Nobel Lecture: CCD—An extension of man’s view. Rev. Modern Physics. 2010. V. 82, fasc. 3. P. 2305—2306.


[11] Goryaev, М.A., Dye sensitization of photoconductivity of polycrystalline silicon. Russian J. Physical Chemistry A. 2015. V. 89. No. 12. P. 2320-2321.


[12] Goryaev М.A., Dye Sensitization of Silicon. International J. Modern Engineering Research. 2017. V. 7. No 5. P. 39-43.


[13] Povkhan T.I., Demidov K.B., Akimov I.A., Cells for research of electrophysical properties of powdered semiconductors. Pribory and Tekhnika Eksperimenta. 1974. No 3. P. 217-218.


[14] Goryaev М.A., Spectral Sensitization of Internal Photoeffect in Silicon. Izvestiya Rossiiskogo gosudarstvennogo pedagogicheskogo universiteta. 2015. V. 176. P. 71- 75.


[15] Akimov I.A., The internal photoeffect investigation in semiconductors by the condenser method. Soviet J. Optical Technology. 1966. V. 33. No 5. P. 248-257.


[16] Goryaev М.A., Spectral dependence of the luminescence quantum yield of adsorbed dyes. In Optics and Spectroscopy. 1997. V. 82. No 5. P. 723-725.


[17] Goryaev М.A., Photoprocesses in aluminum hydride with an adsorbed dye. Optics and Spectroscopy. 1980. V. 49. No 6. P. 625-627.


[18] Goryaev М.A., Akimov I.A., 1979. Optics and Spectroscopy. V. 47. No 2. P. 409-411.


[19] Komolov S.A., Gerasimova N.B., Aliev Yu.G., et al, Photoelectronic properties of organic films on the silicon surface. Zh. tekhnicheskoi fiziki., 2006. V. 76. No 7. P. 76-80.


[20] Pimenov Yu.D., Goryaev М.A., Scales of perturbation undergone by an adsorbentsemiconductor with adsorption of molecules of donor-acceptor type. Kinetics and Catalysis. 1976. V. 17. No 4. P. 899-903.


[21] Demidov К.B., Titov A.V., Akimov I.A., Total spectrum of localized electronic levels in nonsensitized and sensitized by dye photoconductor. Zh. nauchnoi i prikladnoi fotografii i kinematografii. 1981. V. 26. No 5. P. 375-377.


[22] Goryaev М.A., Energetics of intrinsic defects and the mechanism of secondary photochemical properties in AlH3. Optics and Spectroscopy. 1998. V. 84. № 6. P. 870-872.